| Weight |
0.01 kg
|
| Type |
Transistor Silicon NPN |
| Case |
TO3 |
| Manufacturer |
NXP Semiconductors |
| Vbr CBO |
80 |
| Vbr CEO |
60 |
| Max. PD (W) |
20 |
| Max. hFE |
90- |
| Min hFE |
30 |
| @Ic (test) (A) |
1.0 |
| Icbo Max. @Vcb Max. (A) |
10u |
| Polarity |
NPN |
| Derate Above 25°C |
200m |
| Trans. Freq (Hz) Min. |
30M |
| Oper. Temp (°C) Max. |
140 |
| @VCE (V) |
5.0 |
| Pinout Equivalence Number |
N/A |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
20 W |
| Maximum Collector-Base Voltage |Vcb| |
80 V |
| Maximum Collector-Emitter Voltage |Vce| |
60 V |
| Maximum Collector Current |Ic max| |
4 A |
| Max. Operating Junction Temperature (Tj) |
165 °C |
| Transition Frequency (ft): |
30 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
30 |
| SKU |
135815 |