| Weight |
0.05 kg
|
| Type |
Transistor Silicon NPN |
| Case |
TO66 |
| Manufacturer |
ST Microelectronics - STM |
| Vbr CBO |
300 |
| Vbr CEO |
300 |
| Ckts Per Dev. |
1 |
| Max. PD (W) |
10 |
| t(f) Max. (S) |
900n |
| Max. hFE |
240 |
| Min hFE |
40 |
| Ic Max. (A) |
40 |
| @Ic (test) (A) |
10 |
| Polarity |
NPN |
| Tr Max. (s) |
1.2u |
| Therm Res. (J-C) |
300m |
| Derate Above 25°C |
80m |
| VCE(sat) Max. |
2.5 |
| Trans. Freq (Hz) Min. |
70M |
| Oper. Temp (°C) Max. |
125 |
| @VCE (V) |
10 |
| Isolated Case (Y/N) |
Yes |
| Pinout Equivalence Number |
N/A |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
10 W |
| Maximum Collector-Base Voltage |Vcb| |
300 V |
| Maximum Collector-Emitter Voltage |Vce| |
300 V |
| Maximum Collector Current |Ic max| |
0.5 A |
| Max. Operating Junction Temperature (Tj) |
165 °C |
| Transition Frequency (ft): |
70 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
40 |
| SKU |
115533 |