The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
BD120
View detailed images (12)

BD120

SKU: BD120
BD120 Transistor Silicon NPN CASE: TO66 MAKE: SGS Thomson
Product specifications
Type Transistor Silicon NPN
Case TO66
Manufacturer SGS Thomson
Vbr CBO 150
Vbr CEO 150
Max. PD (W) 7.5
Min hFE 170-
@Ic (test) (A) 150m
Polarity NPN
Derate Above 25°C 100m
Trans. Freq (Hz) Min. 30M
Oper. Temp (°C) Max. 140
@VCE (V) 10
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 7.5 W
Maximum Collector-Base Voltage |Vcb| 150 V
Maximum Collector-Emitter Voltage |Vce| 150 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 165 °C
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN 170
SKU 135816
Back