Weight |
0.01 kg
|
Type |
Transistor Silicon NPN |
Manufacturer |
NXP Semiconductors |
Case |
TO126 |
Vbr CBO |
1.0k |
Vbr CEO |
1.0k |
Ckts Per Dev. |
1 |
Max. PD (W) |
15 |
t(f) Max. (S) |
3.0u |
Min hFE |
100 |
Ic Max. (A) |
3.0 |
@Ic (test) (A) |
50 |
Icbo Max. @Vcb Max. (A) |
5.0u |
Polarity |
NPN |
Tr Max. (s) |
3.0u |
R(sat) (Û) |
800m |
Therm Res. (J-C) |
300m |
Derate Above 25°C |
166m |
VCE(sat) Max. |
2.5 |
Trans. Freq (Hz) Min. |
60M |
Oper. Temp (°C) Max. |
125 |
@VCE (V) |
12 |
Isolated Case (Y/N) |
Yes |
Pinout Equivalence Number |
3-15 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
11 W |
Maximum Collector-Base Voltage |Vcb| |
70 V |
Maximum Collector-Emitter Voltage |Vce| |
45 V |
Maximum Emitter-Base Voltage |Veb| |
5 V |
Maximum Collector Current |Ic max| |
3 A |
Max. Operating Junction Temperature (Tj) |
125 °C |
Transition Frequency (ft): |
60 MHz |
Forward Current Transfer Ratio (hFE), MIN |
40 |
SKU |
16876 |