| Weight |
0.01 kg
|
| Type |
Transistor Silicon PNP |
| Case |
TO126 |
| Manufacturer |
SMC |
| Vbr CBO |
1.0k |
| Vbr CEO |
1.0k |
| Ckts Per Dev. |
1 |
| Max. PD (W) |
15 |
| Derate (Amb) (W/°C) |
166m |
| t(f) Max. (S) |
3.0u |
| Min hFE |
100 |
| Ic Max. (A) |
3.0 |
| @Ic (test) (A) |
50 |
| Icbo Max. @Vcb Max. (A) |
5.0u |
| Polarity |
PNP |
| Tr Max. (s) |
3.0u |
| R(sat) (Û) |
800m |
| Therm Res. (J-C) |
300m |
| VCE(sat) Max. |
2.5 |
| Trans. Freq (Hz) Min. |
60M |
| Oper. Temp (°C) Max. |
125 |
| @VCE (V) |
12 |
| Isolated Case (Y/N) |
Yes |
| Pinout Equivalence Number |
3-15 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
11 W |
| Maximum Collector-Base Voltage |Vcb| |
45 V |
| Maximum Collector-Emitter Voltage |Vce| |
45 V |
| Maximum Emitter-Base Voltage |Veb| |
4 V |
| Maximum Collector Current |Ic max| |
3 A |
| Max. Operating Junction Temperature (Tj) |
125 °C |
| Transition Frequency (ft): |
60 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
40 |
| SKU |
16802 |