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BD136-6
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BD136-6

SKU: BD136-6
BD136-6 Transistor Silicon PNP CASE: TO126 MAKE: Siemens Semiconductors
Datasheet
BD136-6 Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO126
Manufacturer Siemens Semiconductors
Vbr CBO 45
Vbr CEO 45
Max. PD (W) 13
Derate (Amb) (W/°C) 100m
Max. hFE 100
Min hFE 40
Ic Max. (A) 1.5
@Ic (test) (A) 150m
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
R(sat) (Û) 1.2
Trans. Freq (Hz) Min. 75M
Oper. Temp (°C) Max. 150
@VCE (V) 2.0
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 12 W
Maximum Collector-Base Voltage |Vcb| 45 V
Maximum Collector-Emitter Voltage |Vce| 45 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 407174
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