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BD137
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BD137

SKU: BD137
BD137 is a silicon NPN bipolar transistor for general-purpose medium-power linear and switching use. It comes in a TO-126-3 through-hole package, rated 60 V collector-emitter, 1.5 A continuous collector current and 1.25 W dissipation; the device is obsolete/discontinued.
Price:
£9.59 Inc. VAT (£7.99 Ex. VAT)
£9.59 Inc. VAT (£7.99 Ex. VAT)
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Datasheet
BD137 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO126
Manufacturer ON Semiconductor
Vbr CBO 60
Vbr CEO 60
Max. PD (W) 8.0
Max. hFE 250
Min hFE 40
Ic Max. (A) 1.5
@Ic (test) (A) 150m
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
Derate Above 25°C 100m
Trans. Freq (Hz) Min. 250M
Oper. Temp (°C) Max. 150
@VCE (V) 2.0
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 12 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 16668
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