Weight |
0.01 kg
|
Type |
Transistor Silicon NPN |
Manufacturer |
ST Microelectronics - STM |
Case |
TO3 |
Vbr CBO |
160 |
Vbr CEO |
140 |
Ckts Per Dev. |
1 |
Max. PD (W) |
117 |
t(f) Max. (S) |
500n |
Max. hFE |
70 |
Min hFE |
20 |
Ic Max. (A) |
10 |
@Ic (test) (A) |
15 |
Polarity |
NPN |
Tr Max. (s) |
1.0u |
Therm Res. (J-C) |
300m |
Derate Above 25°C |
666m |
VCE(sat) Max. |
2.5 |
Oper. Temp (°C) Max. |
100 |
@VCE (V) |
4.0 |
Isolated Case (Y/N) |
Yes |
Pinout Equivalence Number |
N/A |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
117 W |
Maximum Collector-Base Voltage |Vcb| |
140 V |
Maximum Collector-Emitter Voltage |Vce| |
120 V |
Maximum Emitter-Base Voltage |Veb| |
7 V |
Maximum Collector Current |Ic max| |
8 A |
Max. Operating Junction Temperature (Tj) |
200 °C |
Transition Frequency (ft): |
0.8 MHz |
Forward Current Transfer Ratio (hFE), MIN |
20 |
SKU |
84697 |