Weight |
0.05 kg
|
Case |
TO66 |
Type |
Transistor Silicon NPN |
Manufacturer |
Discrete Semiconductor Industries - DSI |
Vbr CBO |
250 |
Vbr CEO |
250 |
Ckts Per Dev. |
1 |
Max. PD (W) |
150 |
t(f) Max. (S) |
500n |
Max. hFE |
160 |
Min hFE |
40 |
Ic Max. (A) |
4.0 |
@Ic (test) (A) |
15 |
Icbo Max. @Vcb Max. (A) |
2.0m |
Polarity |
NPN |
Tr Max. (s) |
1.0u |
Therm Res. (J-C) |
300m |
Derate Above 25°C |
166m |
VCE(sat) Max. |
2.5 |
Trans. Freq (Hz) Min. |
1.0M |
Oper. Temp (°C) Max. |
125 |
@VCE (V) |
1.5 |
Isolated Case (Y/N) |
Yes |
Pinout Equivalence Number |
3-12 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
31 W |
Maximum Collector-Base Voltage |Vcb| |
60 V |
Maximum Collector-Emitter Voltage |Vce| |
60 V |
Maximum Emitter-Base Voltage |Veb| |
7 V |
Maximum Collector Current |Ic max| |
4 A |
Max. Operating Junction Temperature (Tj) |
200 °C |
Transition Frequency (ft): |
1.3 MHz |
Forward Current Transfer Ratio (hFE), MIN |
40 |
SKU |
83413 |