BD157
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BD157

SKU: BD157
BD157 is a silicon NPN power transistor intended for power output stages. It comes in a TO-225AA (Case 77-08) package and features VCEO 250 V, continuous collector current 0.5 A (peak 1.0 A), 20 W power dissipation, and hFE 30–240 at IC=50 mA, VCE=10 V.
Price:
£9.59 Inc. VAT (£7.99 Ex. VAT)
£9.59 Inc. VAT (£7.99 Ex. VAT)
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Datasheet
BD157 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO126
Manufacturer Motorola Semiconductor
Vbr CBO 275
Vbr CEO 250
Max. PD (W) 20
Max. hFE 240
Min hFE 30
Ic Max. (A) 500m
@Ic (test) (A) 50m
Icbo Max. @Vcb Max. (A) 100u
Polarity NPN
Derate Above 25°C 160m
Oper. Temp (°C) Max. 150
@VCE (V) 10
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 20 W
Maximum Collector-Base Voltage |Vcb| 275 V
Maximum Collector-Emitter Voltage |Vce| 250 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 30
SKU 85837
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