BD159

SKU: BD159

BD159 Transistor Silicon NPN CASE: TO126 MAKE: ON Semiconductor

Price:

£5.75 Inc. VAT (£4.79 Ex. VAT)

Qty

Datasheet

BD159 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO126
Manufacturer	ON Semiconductor
Vbr CBO	300
Vbr CEO	300
Ckts Per Dev.	1
Max. PD (W)	150
t(f) Max. (S)	500n
Max. hFE	240
Min hFE	30
Ic Max. (A)	500m
@Ic (test) (A)	15
Icbo Max. @Vcb Max. (A)	100u
Polarity	NPN
Tr Max. (s)	1.0u
Therm Res. (J-C)	300m
Derate Above 25°C	160m
VCE(sat) Max.	2.5
Oper. Temp (°C) Max.	125
@VCE (V)	10
Isolated Case (Y/N)	Yes
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	20 W
Maximum Collector-Base Voltage \|Vcb\|	375 V
Maximum Collector-Emitter Voltage \|Vce\|	350 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.5 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	30
SKU	79703

Back