BD179-10

SKU: BD179-10

BD179-10 Transistor Silicon NPN CASE: TO126 MAKE: Motorola Semiconductor

Datasheet

BD179-10 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO126
Manufacturer	Motorola Semiconductor
Vbr CBO	80
Vbr CEO	80
Max. PD (W)	30
Max. hFE	160
Min hFE	63
Ic Max. (A)	3.0
@Ic (test) (A)	150m
Icbo Max. @Vcb Max. (A)	100u
Polarity	NPN
Derate Above 25°C	240m
Trans. Freq (Hz) Min.	3.0M
Oper. Temp (°C) Max.	150
@VCE (V)	2.0
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	30 W
Maximum Collector-Base Voltage \|Vcb\|	80 V
Maximum Collector-Emitter Voltage \|Vce\|	80 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	3 A
Max. Operating Junction Temperature (Tj)	135 °C
Transition Frequency (ft):	3 MHz
Forward Current Transfer Ratio (hFE), MIN	63
SKU	739233

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