BD215

SKU: BD215

BD215 Transistor Silicon NPN CASE: SOT9 MAKE: SGS Thomson

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	SOT9
Manufacturer	SGS Thomson
Vbr CEO	300
Max. PD (W)	21
Min hFE	40
Ic Max. (A)	500m
@Ic (test) (A)	100m
Polarity	NPN
Derate Above 25°C	140m
Trans. Freq (Hz) Min.	10M
Oper. Temp (°C) Max.	140
@VCE (V)	10
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	21 W
Maximum Collector-Base Voltage \|Vcb\|	500 V
Maximum Collector-Emitter Voltage \|Vce\|	300 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	0.5 A
Max. Operating Junction Temperature (Tj)	175 °C
Transition Frequency (ft):	10 MHz
Forward Current Transfer Ratio (hFE), MIN	40
SKU	135843

Back