The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
BD231

BD231

SKU: BD231
BD231 Transistor Silicon PNP CASE: TO126 MAKE: NXP Semiconductors
Price:
£5.75 Inc. VAT (£4.79 Ex. VAT)
£5.75 Inc. VAT (£4.79 Ex. VAT)
Qty
  • 65 pieces in 1-2 Days
  • More pieces shipped in 14 days
?
Datasheet
BD231 Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO126
Manufacturer NXP Semiconductors
Vbr CBO 100
Vbr CEO 80
Max. PD (W) 12
Derate (Amb) (W/°C) 142m
Max. hFE 250
Min hFE 40
Ic Max. (A) 1.5
@Ic (test) (A) 150m
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
R(sat) (Û) 800m
Trans. Freq (Hz) Min. 50M
Oper. Temp (°C) Max. 150
@VCE (V) 2.0
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 10 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 1.5 A
Max. Operating Junction Temperature (Tj) 125 °C
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 79720
Back