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BD237
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BD237

SKU: BD237
BD237 is a silicon NPN power transistor in an SOT-32 package designed for switching and amplification. It features an 80 V collector-emitter rating, 2 A collector current, 25 W power dissipation and low saturation voltage. Manufactured using planar technology with a Base Island layout.
Price:
£4.79 Inc. VAT (£3.99 Ex. VAT)
£4.79 Inc. VAT (£3.99 Ex. VAT)
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Datasheet
BD237 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO126
Manufacturer ST Microelectronics - STM
Vbr CBO 100
Vbr CEO 80
Max. PD (W) 25
t(f) Max. (S) 1.1u-+
Max. hFE 250
Min hFE 40
Ic Max. (A) 2.0
@Ic (test) (A) 150m
Icbo Max. @Vcb Max. (A) 100u
Polarity NPN
Tr Max. (s) 300n-
R(sat) (Û) 600m
Derate Above 25°C 200m
Trans. Freq (Hz) Min. 3.0M
Oper. Temp (°C) Max. 150
@VCE (V) 2.0
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 25 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN 25
SKU 16675
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