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BD239E
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BD239E

SKU: BD239E
BD239E Transistor Silicon NPN CASE: TO220 MAKE: Generic
Datasheet
BD239E Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO220
Manufacturer Power Innovations
Vbr CEO 140
Max. PD (W) 2.0
t(f) Max. (S) 800n-+
Min hFE 40
Ic Max. (A) 2.0
@Ic (test) (A) 200m
Icbo Max. @Vcb Max. (A) 200u
Polarity NPN
Tr Max. (s) 300n-
R(sat) (Û) 700m
Derate Above 25°C 16m
Trans. Freq (Hz) Min. 3.0M
Oper. Temp (°C) Max. 140
@VCE (V) 4.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 30 W
Maximum Collector-Base Voltage |Vcb| 180 V
Maximum Collector-Emitter Voltage |Vce| 140 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN 15
SKU 739126
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