Weight |
0.01 kg
|
Case |
TO218 |
Type |
Transistor Silicon PNP |
Manufacturer |
Texas Instruments |
Vbr CEO |
45 |
Max. PD (W) |
3.0 |
Derate (Amb) (W/°C) |
625m |
t(f) Max. (S) |
800n-+ |
Min hFE |
25 |
Ic Max. (A) |
10 |
@Ic (test) (A) |
1.0 |
Icbo Max. @Vcb Max. (A) |
400u |
Polarity |
PNP |
Tr Max. (s) |
200n- |
R(sat) (Û) |
333m |
Trans. Freq (Hz) Min. |
3.0M |
Oper. Temp (°C) Max. |
140 |
@VCE (V) |
4.0 |
Pinout Equivalence Number |
3-15 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
80 W |
Maximum Collector-Base Voltage |Vcb| |
55 V |
Maximum Collector-Emitter Voltage |Vce| |
45 V |
Maximum Emitter-Base Voltage |Veb| |
5 V |
Maximum Collector Current |Ic max| |
15 A |
Max. Operating Junction Temperature (Tj) |
150 °C |
Transition Frequency (ft): |
3 MHz |
Forward Current Transfer Ratio (hFE), MIN |
30 |
SKU |
85417 |