BD249A

SKU: BD249A

BD249A Transistor Silicon NPN CASE: TO218 MAKE: ST Microelectronics - STM

Datasheet

BD249A Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO218
Manufacturer	ST Microelectronics - STM
Vbr CEO	60
Max. PD (W)	3.0
Min hFE	20
Ic Max. (A)	25
@Ic (test) (A)	5.0
Icbo Max. @Vcb Max. (A)	700u
Polarity	NPN
Tr Max. (s)	300n
R(sat) (Û)	120m
Derate Above 25°C	1.0
Trans. Freq (Hz) Min.	3.0M
Oper. Temp (°C) Max.	140
@VCE (V)	4.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	125 W
Maximum Collector-Base Voltage \|Vcb\|	70 V
Maximum Collector-Emitter Voltage \|Vce\|	60 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	40 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft):	3 MHz
Forward Current Transfer Ratio (hFE), MIN	25
SKU	115552

Back