BD263B
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BD263B

SKU: BD263B
BD263B Transistor Silicon NPN CASE: TO126 MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case TO126
Manufacturer Generic
Vbr CEO 100
Max. PD (W) 36
Min hFE 500-
Ic Max. (A) 4.0
@Ic (test) (A) 4.0
Icbo Max. @Vcb Max. (A) 200u
Mat. Silicon Logic
Polarity NPN
R(sat) (Û) 1.6
Derate Above 25°C 285m
Trans. Freq (Hz) Min. 7.0M
@VCE (test) 3.0
Oper. Temp (°C) Max. 150
Pinout Equivalence Number 3-35
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 36 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 6 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN 750
SKU 84700
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