BD275

SKU: BD275

BD275 Transistor Silicon NPN CASE: TO220F MAKE: Philips

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO220F
Manufacturer	Philips
Vbr CBO	100
Vbr CEO	80
Max. PD (W)	36
Min hFE	40
Ic Max. (A)	4.0
@Ic (test) (A)	500m
Icbo Max. @Vcb Max. (A)	100u
Polarity	NPN
R(sat) (Û)	500m
Derate Above 25°C	285m
Trans. Freq (Hz) Min.	2.0M
Oper. Temp (°C) Max.	140
@VCE (V)	4.0
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	40 W
Maximum Collector-Base Voltage \|Vcb\|	100 V
Maximum Collector-Emitter Voltage \|Vce\|	80 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	4 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft):	3 MHz
Forward Current Transfer Ratio (hFE), MIN	20
SKU	135877

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