BD277
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BD277

SKU: BD277
BD277 Transistor Silicon PNP CASE: TO66 MAKE: Generic
Product specifications
Type Transistor Silicon PNP
Case TO66
Manufacturer General Electric Solid State
Vbr CBO 45
Vbr CEO 45
Max. PD (W) 70
Derate (Amb) (W/°C) 560m
Max. hFE 150
Min hFE 30
Ic Max. (A) 7.0
@Ic (test) (A) 1.7
Icbo Max. @Vcb Max. (A) 100u
Polarity PNP
R(sat) (Û) 285m
Trans. Freq (Hz) Min. 10M
Oper. Temp (°C) Max. 140
@VCE (V) 2.0
Pinout Equivalence Number 4-24
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 70 W
Maximum Collector-Base Voltage |Vcb| 45 V
Maximum Collector-Emitter Voltage |Vce| 45 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 7 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 116750
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