BD323B

BD323B

SKU: BD323B
BD323B Transistor Silicon NPN CASE: TO39 MAKE: Generic
Product specifications
Equivalent BD323
Type Transistor Silicon NPN
Case TO39
Manufacturer Generic
Vbr CEO 60
Max. PD (W) 10
t(f) Max. (S) 650n+
Min hFE 2.5k
Ic Max. (A) 1.0
@Ic (test) (A) 2.0
Icbo Max. @Vcb Max. (A) 1.0u
Mat. Silicon Logic
Polarity NPN
Tr Max. (s) 100n
R(sat) (Û) 850m
Derate Above 25°C 66m
Trans. Freq (Hz) Min. 80M
@VCE (test) 5.0
Oper. Temp (°C) Max. 175
@VCE (V) 5.0
Pinout Equivalence Number 3-36
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 10 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 40 MHz
Forward Current Transfer Ratio (hFE), MIN 2500
SKU 372329
Back