The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
BD335
View detailed images (13)

BD335

SKU: BD335
BD335 Transistor Silicon NPN CASE: TO126 MAKE: ST Microelectronics - STM
Price:
£5.75 Inc. VAT (£4.79 Ex. VAT)
£5.75 Inc. VAT (£4.79 Ex. VAT)
Qty
  • 4 pieces in 1-2 Days
  • More pieces shipped in 14 days
?
Product specifications
Type Transistor Silicon NPN
Case TO126
Manufacturer ST Microelectronics - STM
Vbr CEO 100
Max. PD (W) 60
t(on) Delay (S) 2.0u
t(f) Max. (S) 15n
Min hFE 750
Ic Max. (A) 6.0
@Ic (test) (A) 3.0
Icbo Max. @Vcb Max. (A) 200u
Mat. Silicon Logic
Polarity NPN
Tr Max. (s) 15n
R(sat) (Û) 666m
Derate Above 25°C 480m
Trans. Freq (Hz) Min. 7.0M
@VCE (test) 3.0
Oper. Temp (°C) Max. 150
Pinout Equivalence Number 3-37
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 60 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 6 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN 750
SKU 85852
Back