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BD370B
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BD370B

SKU: BD370B
BD370B Transistor Silicon PNP CASE: TO251 MAKE: National Semiconductor - NSC
Product specifications
Type Transistor Silicon PNP
Case TO251
Manufacturer National Semiconductor - NSC
Vbr CBO 60
Vbr CEO 60
Max. PD (W) 1.2
Derate (Amb) (W/°C) 20m
Max. hFE 400
Min hFE 40
Ic Max. (A) 2.0
@Ic (test) (A) 100m
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
Trans. Freq (Hz) Min. 50M
Oper. Temp (°C) Max. 140
@VCE (V) 1.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 2.5 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 1.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 30 pF
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN 25
SKU 407237
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