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BD376-16
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BD376-16

SKU: BD376-16
BD376-16 Transistor Silicon PNP CASE: TO126 MAKE: National Semiconductor - NSC
Product specifications
Type Transistor Silicon PNP
Case TO126
Manufacturer National Semiconductor - NSC
Vbr CBO 50
Vbr CEO 45
Max. PD (W) 15
Derate (Amb) (W/°C) 120m
Max. hFE 250
Min hFE 100
Ic Max. (A) 2.0
@Ic (test) (A) 150m
Icbo Max. @Vcb Max. (A) 2.0u
Polarity PNP
Oper. Temp (°C) Max. 140
@VCE (V) 2.0
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 25 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 45 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SKU 407246
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