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BD435B
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BD435B

SKU: BD435B
BD435B Transistor Silicon NPN CASE: TO126 MAKE: Siemens Semiconductors
Product specifications
Type Transistor Silicon NPN
Case TO126
Manufacturer Siemens Semiconductors
Vbr CBO 32
Vbr CEO 32
Max. PD (W) 45
Max. hFE 400
Min hFE 160
Ic Max. (A) 4.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 100u
Polarity NPN
Derate Above 25°C 300m
Trans. Freq (Hz) Min. 3.0M
Oper. Temp (°C) Max. 175
@VCE (V) 1.0
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 36 W
Maximum Collector-Base Voltage |Vcb| 32 V
Maximum Collector-Emitter Voltage |Vce| 32 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 4 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN 160
SKU 738684
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