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BD436C
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BD436C

SKU: BD436C
BD436C Transistor Silicon PNP CASE: TO126 MAKE: Siemens Semiconductors
Product specifications
Type Transistor Silicon PNP
Case TO126
Manufacturer Siemens Semiconductors
Vbr CBO 32
Vbr CEO 32
Max. PD (W) 45
Derate (Amb) (W/°C) 300m
Max. hFE 630
Min hFE 250
Ic Max. (A) 4.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 100u
Polarity PNP
Trans. Freq (Hz) Min. 3.0M
Oper. Temp (°C) Max. 175
@VCE (V) 1.0
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 36 W
Maximum Collector-Base Voltage |Vcb| 32 V
Maximum Collector-Emitter Voltage |Vce| 32 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 4 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN 250
SKU 738675
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