Weight |
0.01 kg
|
Type |
Transistor Silicon NPN |
Manufacturer |
Motorola Semiconductor |
Case |
TO202 |
Vbr CBO |
45 |
Vbr CEO |
45 |
Max. PD (W) |
1.0 |
Max. hFE |
350 |
Min hFE |
60 |
Ic Max. (A) |
2.0 |
@Ic (test) (A) |
150m |
Icbo Max. @Vcb Max. (A) |
100n |
Polarity |
NPN |
R(sat) (Û) |
1.0 |
Derate Above 25°C |
80m |
Trans. Freq (Hz) Min. |
160M |
Oper. Temp (°C) Max. |
150 |
@VCE (V) |
2.0 |
Pinout Equivalence Number |
3-12 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
10 W |
Maximum Collector-Base Voltage |Vcb| |
45 V |
Maximum Collector-Emitter Voltage |Vce| |
45 V |
Maximum Emitter-Base Voltage |Veb| |
4 V |
Maximum Collector Current |Ic max| |
2 A |
Max. Operating Junction Temperature (Tj) |
150 °C |
Transition Frequency (ft): |
50 MHz |
Forward Current Transfer Ratio (hFE), MIN |
60 |
SKU |
115575 |