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BD533J
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BD533J

SKU: BD533J
BD533J Transistor Silicon NPN CASE: TO220 MAKE: ST Microelectronics - STM
Datasheet
BD533J Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO220
Manufacturer ST Microelectronics - STM
Vbr CEO 45
Max. PD (W) 50
Max. hFE 75
Min hFE 30
@Ic (test) (A) 2.0
Polarity NPN
Trans. Freq (Hz) Min. 8.0M
@VCE (V) 2.0
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 50 W
Maximum Collector-Base Voltage |Vcb| 45 V
Maximum Collector-Emitter Voltage |Vce| 45 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 4 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 737962
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