The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
BD539B

BD539B

SKU: BD539B
BD539B Transistor Silicon NPN CASE: TO66P MAKE: Texas Instruments
Price:
£4.79 Inc. VAT (£3.99 Ex. VAT)
£4.79 Inc. VAT (£3.99 Ex. VAT)
Qty
  • 2 pieces in 1-2 Days
  • More pieces shipped in 14 days
?
Datasheet
BD539B Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO66P
Manufacturer Texas Instruments
Vbr CBO 80
Vbr CEO 80
Max. PD (W) 45
Min hFE 30
Ic Max. (A) 5.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 200u
Polarity NPN
Tr Max. (s) 300n
R(sat) (Û) 400m
Derate Above 25°C 360m
Trans. Freq (Hz) Min. 3.0M
Oper. Temp (°C) Max. 140
@VCE (V) 4.0
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 45 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 407269
Back