Weight |
0.01 kg
|
Type |
Transistor Silicon NPN |
Manufacturer |
Microsemi Corporation |
Case |
TO127 |
Vbr CBO |
60 |
Vbr CEO |
60 |
Max. PD (W) |
55 |
Min hFE |
25 |
Ic Max. (A) |
8.0 |
@Ic (test) (A) |
3.0 |
Icbo Max. @Vcb Max. (A) |
100u |
Polarity |
NPN |
Derate Above 25°C |
434m |
Trans. Freq (Hz) Min. |
3.0M |
Oper. Temp (°C) Max. |
140 |
@VCE (V) |
2.0 |
Pinout Equivalence Number |
3-10 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
55 W |
Maximum Collector-Base Voltage |Vcb| |
60 V |
Maximum Collector-Emitter Voltage |Vce| |
60 V |
Maximum Emitter-Base Voltage |Veb| |
5 V |
Maximum Collector Current |Ic max| |
8 A |
Max. Operating Junction Temperature (Tj) |
150 °C |
Transition Frequency (ft): |
3 MHz |
Forward Current Transfer Ratio (hFE), MIN |
25 |
SKU |
84722 |