The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
BD612
View detailed images (5)

BD612

SKU: BD612
BD612 Transistor Silicon PNP CASE: SOT128 MAKE: Siemens Semiconductors
Datasheet
BD612 Datasheet
Product specifications
Type Transistor Silicon PNP
Case SOT128
Manufacturer Siemens Semiconductors
Vbr CBO 22
Vbr CEO 22
Max. PD (W) 15
Min hFE 85
Ic Max. (A) 4.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 100
Polarity PNP
Oper. Temp (°C) Max. 140
@VCE (V) 1.0
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 50 W
Maximum Collector-Base Voltage |Vcb| 22 V
Maximum Collector-Emitter Voltage |Vce| 22 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 4 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN 85
SKU 135944
Back