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BD636
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BD636

SKU: BD636
BD636 Transistor Silicon PNP CASE: TO220 MAKE: Generic
Product specifications
Type Transistor Silicon PNP
Case TO220
Manufacturer Generic
Vbr CBO 60
Vbr CEO 60
Max. PD (W) 2.0
Derate (Amb) (W/°C) 240m
Min hFE 25
Ic Max. (A) 2.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 200u
Polarity PNP
Tr Max. (s) 300n
R(sat) (Û) 600m
Oper. Temp (°C) Max. 140
@VCE (V) 2.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 30 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 185 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN 25
SKU 737811
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