BD649F

SKU: BD649F

BD649F Transistor - CASE: SOT186 MAKE: Philips

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	SOT186
Manufacturer	Philips
Vbr CEO	100
Max. PD (W)	20
t(on) Delay (S)	2.0u
t(f) Max. (S)	10u+
Min hFE	750
Ic Max. (A)	8.0
@Ic (test) (A)	3.0
Icbo Max. @Vcb Max. (A)	100u
Mat.	Silicon Logic
Polarity	NPN
Tr Max. (s)	15n
@VCE (test)	3.0
Oper. Temp (°C) Max.	150
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	62 W
Maximum Collector-Base Voltage \|Vcb\|	120 V
Maximum Collector-Emitter Voltage \|Vce\|	100 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	8 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft):	1 MHz
Forward Current Transfer Ratio (hFE), MIN	750
SKU	135958

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