BD745D

SKU: BD745D

BD745D Transistor Silicon NPN CASE: TO218 MAKE: HTC Korea

Price:

£14.39 Inc. VAT (£11.99 Ex. VAT)

Qty

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO218
Manufacturer	HTC Korea
Vbr CBO	130
Vbr CEO	120
Max. PD (W)	3.5
t(f) Max. (S)	400n-
Max. hFE	150
Min hFE	20
Ic Max. (A)	20
@Ic (test) (A)	5.0
Icbo Max. @Vcb Max. (A)	100u
Polarity	NPN
Tr Max. (s)	350n-
Derate Above 25°C	28m
Oper. Temp (°C) Max.	140
@VCE (V)	4.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	115 W
Maximum Collector-Base Voltage \|Vcb\|	130 V
Maximum Collector-Emitter Voltage \|Vce\|	120 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	20 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft):	5 MHz
Forward Current Transfer Ratio (hFE), MIN	20
SKU	407296

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