BD809

SKU: BD809

BD809 Transistor Silicon NPN CASE: TO220 MAKE: ON Semiconductor

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£7.19 Inc. VAT (£5.99 Ex. VAT)

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Datasheet

BD809 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO220
Manufacturer	ON Semiconductor
Vbr CBO	80
Vbr CEO	80
Max. PD (W)	90
Min hFE	30
Ic Max. (A)	10
@Ic (test) (A)	2.0
Icbo Max. @Vcb Max. (A)	1.0m
Polarity	NPN
Derate Above 25°C	720m
Trans. Freq (Hz) Min.	1.5M
Oper. Temp (°C) Max.	150
@VCE (V)	2.0
Pinout Equivalence Number	4-33
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	90 W
Maximum Collector-Base Voltage \|Vcb\|	80 V
Maximum Collector-Emitter Voltage \|Vce\|	80 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	10 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft):	1.5 MHz
Forward Current Transfer Ratio (hFE), MIN	30
SKU	79797

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