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BD813A
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BD813A

SKU: BD813A
BD813A Transistor Silicon NPN CASE: TO202 MAKE: Generic
Product specifications
Equivalent BD813
Type Transistor Silicon NPN
Case TO202
Manufacturer Generic
Vbr CBO 45
Vbr CEO 45
Max. PD (W) 2.0
Min hFE 40
Ic Max. (A) 2.0
@Ic (test) (A) 150m
Icbo Max. @Vcb Max. (A) 100u
Polarity NPN
Derate Above 25°C 100m
Trans. Freq (Hz) Min. 3.0M
Oper. Temp (°C) Max. 140
@VCE (V) 2.0
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 12 W
Maximum Collector-Base Voltage |Vcb| 45 V
Maximum Collector-Emitter Voltage |Vce| 45 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SKU 737661
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