The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
BD949
View detailed images (12)

BD949

SKU: BD949
BD949 Transistor Silicon NPN CASE: TO220 MAKE: NXP Semiconductors
Price:
£7.19 Inc. VAT (£5.99 Ex. VAT)
£7.19 Inc. VAT (£5.99 Ex. VAT)
Qty
  • 4 pieces in 1-2 Days
  • More pieces shipped in 14 days
?
Datasheet
BD949 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO220
Manufacturer NXP Semiconductors
Vbr CBO 60
Vbr CEO 60
Max. PD (W) 40
t(f) Max. (S) 1.5u+
Min hFE 20
Ic Max. (A) 5.0
@Ic (test) (A) 2.0
Icbo Max. @Vcb Max. (A) 50u
Polarity NPN
Tr Max. (s) 15n
R(sat) (Û) 500m
Derate Above 25°C 320m
Trans. Freq (Hz) Min. 3.0M
Oper. Temp (°C) Max. 150
@VCE (V) 4.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 40 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 85887
Back