BDB01B

BDB01B

SKU: BDB01B
BDB01B Transistor Silicon NPN CASE: TO92 MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case TO92
Manufacturer Generic
Vbr CEO 60
Max. PD (W) 2.5
Max. hFE 400
Min hFE 40
Ic Max. (A) 500m
@Ic (test) (A) 100m
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
Derate Above 25°C 20m
Trans. Freq (Hz) Min. 50M
Oper. Temp (°C) Max. 140
@VCE (V) 1.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 1 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 737515
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