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BDB01D
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BDB01D

SKU: BDB01D
BDB01D Transistor Silicon NPN CASE: TO92 MAKE: Generic
Datasheet
BDB01D Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO92
Manufacturer Motorola Semiconductor
Vbr CEO 100
Max. PD (W) 2.5
Max. hFE 400
Min hFE 40
Ic Max. (A) 500m
@Ic (test) (A) 100m
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
Derate Above 25°C 20m
Trans. Freq (Hz) Min. 50M
Oper. Temp (°C) Max. 140
@VCE (V) 1.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 1 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 737514
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