BDS10

SKU: BDS10

BDS10 Transistor Silicon NPN CASE: TO220 MAKE: Generic

Datasheet

BDS10 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO220
Manufacturer	SemeLAB
Vbr CBO	60
Vbr CEO	60
Max. PD (W)	90
Max. hFE	250
Min hFE	40
Ic Max. (A)	10
@Ic (test) (A)	0.5
Icbo Max. @Vcb Max. (A)	500u
Polarity	NPN
Trans. Freq (Hz) Min.	3.0M
Oper. Temp (°C) Max.	140
@VCE (V)	4.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	90 W
Maximum Collector-Emitter Voltage \|Vce\|	60 V
Maximum Collector Current \|Ic max\|	15 A
Max. Operating Junction Temperature (Tj)	200 °C
Transition Frequency (ft):	3 MHz
Forward Current Transfer Ratio (hFE), MIN	40
SKU	136084

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