BDS10IG
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BDS10IG

SKU: BDS10IG
BDS10IG Transistor Silicon NPN CASE: TO257AA MAKE: Generic
Datasheet
BDS10IG Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO257AA
Manufacturer SemeLAB
Polarity NPN
Maximum Collector Power Dissipation (Pc) 90 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 15 A
Max. Operating Junction Temperature (Tj) 200 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 737462
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