The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
BDS10N1A
View detailed images (1)

BDS10N1A

SKU: BDS10N1A
BDS10N1A Transistor Silicon NPN CASE: TO276AA MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case TO276AA
Manufacturer Generic
Polarity NPN
Maximum Collector Power Dissipation (Pc) 43.75 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 15 A
Max. Operating Junction Temperature (Tj) 200 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 1425716
Back