BDS11IG
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BDS11IG

SKU: BDS11IG
BDS11IG Transistor Silicon NPN CASE: TO254AA MAKE: Generic
Datasheet
BDS11IG Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO254AA
Manufacturer SemeLAB
Polarity NPN
Maximum Collector Power Dissipation (Pc) 90 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 15 A
Max. Operating Junction Temperature (Tj) 200 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 737454
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