BDS12

SKU: BDS12

BDS12 Transistor Silicon NPN CASE: TO220 MAKE: Semelab

Datasheet

BDS12 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO220
Manufacturer	Semelab
Vbr CBO	100
Vbr CEO	100
Max. PD (W)	90
Max. hFE	250
Min hFE	40
Ic Max. (A)	10
@Ic (test) (A)	0.5
Icbo Max. @Vcb Max. (A)	500u
Polarity	NPN
Trans. Freq (Hz) Min.	3.0M
Oper. Temp (°C) Max.	140
@VCE (V)	4.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	90 W
Maximum Collector-Emitter Voltage \|Vce\|	100 V
Maximum Collector Current \|Ic max\|	15 A
Max. Operating Junction Temperature (Tj)	200 °C
Transition Frequency (ft):	3 MHz
Forward Current Transfer Ratio (hFE), MIN	40
SKU	136086

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