BDS12M2A
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BDS12M2A

SKU: BDS12M2A
BDS12M2A Transistor Silicon NPN CASE: TO257AB MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case TO257AB
Manufacturer Generic
Polarity NPN
Maximum Collector Power Dissipation (Pc) 90 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 15 A
Max. Operating Junction Temperature (Tj) 200 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 1425722
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