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BDS16X
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BDS16X

SKU: BDS16X
BDS16X Transistor Silicon NPN CASE: TO257AB MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case TO257AB
Manufacturer Generic
Polarity NPN
Maximum Collector Power Dissipation (Pc) 43.75 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 120 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 15 A
Max. Operating Junction Temperature (Tj) 200 °C
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 1425735
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