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BDS18
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BDS18

SKU: BDS18
BDS18 Transistor Silicon PNP CASE: TO220 MAKE: Generic
Datasheet
BDS18 Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO220
Manufacturer SemeLAB
Vbr CBO 120
Vbr CEO 120
Max. PD (W) 50
Max. hFE 250
Min hFE 40
Ic Max. (A) 8.0
@Ic (test) (A) 0.5
Icbo Max. @Vcb Max. (A) 20u
Polarity PNP
Trans. Freq (Hz) Min. 30M
Oper. Temp (°C) Max. 140
@VCE (V) 2.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 90 W
Maximum Collector-Emitter Voltage |Vce| 120 V
Maximum Collector Current |Ic max| 15 A
Max. Operating Junction Temperature (Tj) 200 °C
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 136092
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