BDS29AN2
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BDS29AN2

SKU: BDS29AN2
BDS29AN2 Transistor Silicon NPN CASE: TO276AB MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case TO276AB
Manufacturer Generic
Polarity NPN
Maximum Collector Power Dissipation (Pc) 150 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 30 A
Max. Operating Junction Temperature (Tj) 200 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN 1000
SKU 1425760
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