BDT30AF

SKU: BDT30AF

BDT30AF Transistor Silicon PNP CASE: TO220F MAKE: Generic

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO220F
Manufacturer	Generic
Vbr CBO	100
Vbr CEO	60
Max. PD (W)	19
t(f) Max. (S)	1.0u-+
Max. hFE	75
Min hFE	15
Ic Max. (A)	3.0
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	200n
Polarity	PNP
Tr Max. (s)	15n
Trans. Freq (Hz) Min.	3.0M
Oper. Temp (°C) Max.	150
@VCE (V)	4.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	14 W
Maximum Collector-Base Voltage \|Vcb\|	100 V
Maximum Collector-Emitter Voltage \|Vce\|	100 V
Maximum Collector Current \|Ic max\|	1 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft):	3 MHz
Forward Current Transfer Ratio (hFE), MIN	15
SKU	737266

Back